elektronische bauelemente ssg4520h n-ch: 6.6a, 20v, r ds(on) 47 m ?? p-ch: -5.2a, -20v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 10-jan-2012 rev. d page 1 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8 saves board space ? fast switching speed ? high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers,. printers, pcmcia cards, cellular and cordless telephones package information package mpq leader size sop-8 2.5k 13 inch absolute maximum ratings (t a =25 c unless otherwise specified) rating parameter symbol n-ch p-ch unit drain-source voltage v ds 20 -20 v gate-source voltage v gs 8 8 v t a = 25c 6.6 -5.2 a continuous drain current 1 t a = 70c i d 5 -3.8 a pulsed drain current 2 i dm 20 -20 a continuous source current (diode conduction) 1 i s 2.2 -2.2 a t a = 25c 2.1 w total power dissipation 1 t a = 70c p d 1.3 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 62.5 c / w maximum junction-to-ambient 1 steady state r ja 110 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 5.8 6.20 h 0.35 0.51 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.50 0.93 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. sop-8 top view
elektronische bauelemente ssg4520h n-ch: 6.6a, 20v, r ds(on) 47 m ?? p-ch: -5.2a, -20v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 10-jan-2012 rev. d page 2 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol ch min. typ. max. unit teat conditions static n 1 - - v ds =v gs , i d =250 a gate threshold voltage v gs(th) p -1 - - v v ds =v gs , i d = -250 a n - - 100 v ds =0, v gs =8v gate-body leakage i gss p - - 100 na v ds =0, v gs = -8v n - - 1 v ds =8v, v gs =0 zero gate voltage drain current i dss p - - -1 a v ds = -8v, v gs =0 n 10 - - v ds =5v, v gs =4.5v on-state drain current 1 i d(on) p -10 - - a v ds = -5v, v gs = -4.5v - - 47 v gs =4.5v, i d =5.3a n - - 55 v gs =2.5v, i d =5a - - 79 v gs = -4.5v, i d = -4.2a drain-source on-resistance 1 r ds(on) p - - 110 m ? v gs = -2.5v, i d = -3.8a n 0.7 v gs =0, i s =1.1a diode forward voltage v sd p -0.73 v v gs =0, i s = -1.1a n - 10 - v ds =10v, i d =5.3a forward transconductance 1 g fs p - 10 - s v ds = -10v, i d = -4.2a dynamic 2 n 439 input capacitance c iss p 683 n 78 output capacitance c oss p 90 n 68 reverse transfer capacitance c rss p 75 pf n-channel v ds =15v, v gs =0, f=1mhz p-channel v ds = -15v, v gs =0, f=1mhz n - 6 - total gate charge q g p - 11 - n - 0.9 - gate-source charge q gs p - 2.8 - n - 2.1 - gate-drain charge q gd p - 2.7 - nc n-channel i d =5.3a, v ds =10v, v gs =4.5v p-channel i d = -4.2a, v ds = -10v, v gs = -4.5v n - 7 - turn-on delay time t d(on) p - 10 - n - 24 - rise time t r p - 20 - n - 35 - turn-off delay time t d(off) p - 49 - n - 19 - fall time t f p - 21 - ns n-channel v dd =10v, v gen =4.5v i d =5.3a, r gen =6 ? , r l =1.8 ? p-channel v dd = -10v, v gen = -4.5v i d = -4.2a, r gen =6 ? , r l =2.3 ? notes: 1. pulse test pw 300 s duty cycle QQ 2%. 2. guaranteed by design, not s ubject to production testing.
elektronische bauelemente ssg4520h n-ch: 6.6a, 20v, r ds(on) 47 m ?? p-ch: -5.2a, -20v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 10-jan-2012 rev. d page 3 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (n-channel)
elektronische bauelemente ssg4520h n-ch: 6.6a, 20v, r ds(on) 47 m ?? p-ch: -5.2a, -20v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 10-jan-2012 rev. d page 4 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente ssg4520h n-ch: 6.6a, 20v, r ds(on) 47 m ?? p-ch: -5.2a, -20v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 10-jan-2012 rev. d page 5 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves (p-channel)
elektronische bauelemente ssg4520h n-ch: 6.6a, 20v, r ds(on) 47 m ?? p-ch: -5.2a, -20v, r ds(on) 79 m ?? n & p-ch enhancement mode power mosfet 10-jan-2012 rev. d page 6 of 6 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
